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Transistor
2SA1309A
Silicon PNP epitaxial planer type
For low-frequency amplification Complementary to 2SC3311A
Unit: mm
4.00.2
3.00.2
s Features
q q q
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings -60 -50 -7 -200 -100 300 150 -55 ~ +150
Unit V V V mA mA mW C C
1:Emitter 2:Collector 3:Base
1
2
3
1.27 1.27 2.540.15
EIAJ:SC-72 New S Type Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE fT Cob
*
Conditions VCB = -10V, IE = 0 VCE = -10V, IB = 0 IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCE = -10V, IC = -2mA IC = -50mA, IB = -5mA VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz
min
typ
max -100 -1
2.00.2
(Ta=25C)
0.70.1
marking
+0.2 0.45-0.1
s Absolute Maximum Ratings
15.60.5
High foward current transfer ratio hFE. Allowing supply with the radial taping. Optimum for high-density mounting.
Unit nA A V V V
-60 -50 -7 160 460 - 0.3 80 3.5
VCE(sat)
V MHz pF
*h
FE
Rank classification
Q 160 ~ 260 R 210 ~ 340 S 290 ~ 460 hFE
Rank
1
Transistor
PC -- Ta
500 120 Ta=25C 450 100 -200
2SA1309A
IC -- VCE
-240 VCE=-5V
IC -- VBE
Collector power dissipation PC (mW)
Collector current IC (mA)
400 350 300 250 200 150 100 50 0 20 40 60 80 100 120 140 160
80 IB=-300A 60 -250A -200A 40 -150A -100A 20 -50A 0 0 -2 -4 -6 -8 -10 -12
Collector current IC (mA)
-160 Ta=75C
25C -25C
-120
-80
-40
0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
-10 -3 -1 Ta=75C 25C -25C IC/IB=10 600
hFE -- IC
160 VCE=-5V VCB=-10V Ta=25C 140 120 100 80 60 40 20 0 -1 0 - 0.1 - 0.3
fT -- IE
Forward current transfer ratio hFE
500
400 Ta=75C 300 25C -25C 200
- 0.3 - 0.1 - 0.03 - 0.01
100
- 0.003 - 0.001 -1
-3
-10
-30
-100 -300 -1000
-3
-10
-30
-100 -300 -1000
Transition frequency fT (MHz)
-1
-3
-10
-30
-100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob -- VCB
10
Collector output capacitance Cob (pF)
9 8 7 6 5 4 3 2 1 0 -1
IE=0 f=1MHz Ta=25C
-3
-10
-30
-100
Collector to base voltage VCB (V)
2
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2001 MAR

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